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垂直腔面發射激光器 VCSEL
850nm Super high power VCSEL array (10w)是美國Vixar公(gong)司專(zhuan)門為安防行業(ye)大(da)功率攝像頭，激光照明、3D掃描(miao)和(he)汽車傳感(gan)，手勢識別等(deng)市場設(she)計的(de)一款高(gao)功率的(de)垂直腔(qiang)面激光陣(zhen)列型光源，功率可(ke)達到10W以上(shang)，平均(jun)光電(dian)轉換效率30%以上(shang)，其低功耗、高(gao)亮度和(he)穩定(ding)的(de)光譜偏振特性(xing)倍受廣大(da)工業(ye)客戶歡迎(ying)。
垂直腔面發射激光器 VCSEL
關鍵詞：850nm激光(guang)(guang)(guang)(guang)(guang)器(qi)，安(an)防用(yong)激光(guang)(guang)(guang)(guang)(guang)管，大功(gong)率(lv)激光(guang)(guang)(guang)(guang)(guang)照明光(guang)(guang)(guang)(guang)(guang)源(yuan)，高(gao)(gao)功(gong)率(lv)激光(guang)(guang)(guang)(guang)(guang)照明，森林防火激光(guang)(guang)(guang)(guang)(guang)照明，VCSEL激光(guang)(guang)(guang)(guang)(guang)器(qi)，高(gao)(gao)功(gong)率(lv)激光(guang)(guang)(guang)(guang)(guang)器(qi)，高(gao)(gao)功(gong)率(lv)激光(guang)(guang)(guang)(guang)(guang)光(guang)(guang)(guang)(guang)(guang)源(yuan)，VCSEL陣列(lie)
850nm Super high power VCSEL array (10w)是(shi)美(mei)國(guo)Vixar公司(si)專(zhuan)門為安(an)防行業(ye)大(da)功率(lv)攝像(xiang)頭，激(ji)光(guang)(guang)照明(ming)、3D掃(sao)描(miao)和汽車傳感，手勢識別等市場設計的(de)(de)一款(kuan)高功率(lv)的(de)(de)垂直腔面激(ji)光(guang)(guang)陣列(lie)型光(guang)(guang)源，功率(lv)可(ke)達到10W以(yi)上(shang)，平均光(guang)(guang)電轉換效率(lv)30%以(yi)上(shang)，其(qi)低功耗(hao)、高亮度(du)和穩定的(de)(de)光(guang)(guang)譜偏(pian)振特性倍受廣大(da)工業(ye)客(ke)戶(hu)歡迎。 它適合在(zai)高速球機和云臺等安(an)防監(jian)控(kong)(kong)(kong)系統。特別是(shi)在(zai)用于森(sen)林(lin)防火、河道監(jian)控(kong)(kong)(kong)、海事監(jian)控(kong)(kong)(kong)、城(cheng)市全景監(jian)控(kong)(kong)(kong)和城(cheng)市消(xiao)防等大(da)型云臺上(shang)有顯著(zhu)地優勢。以(yi)其(qi)亮度(du)高，射程遠，功耗(hao)低以(yi)及角度(du)可(ke)調等特點*替(ti)代了常規激(ji)光(guang)(guang)光(guang)(guang)源，稱(cheng)為新一代安(an)防監(jian)控(kong)(kong)(kong)光(guang)(guang)源的(de)(de)*。
光電特性
VCSEL Operating Temp (Tv) =25°C &; Operating Current=12A QCW unless otherwise stated) | ||||||
Parameter | Symbol | Units | Minimum | Typical | Maximum | Notes |
Threshold current | Ith | A | -- | 2.0 | -- |
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Operating voltage | Vf | Volts | -- | 2.25 | -- |
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Slope efficiency | SE | W/m | -- | 0.98 | -- |
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Optical output power | Lop | W | -- | 10 | -- | T=25°C |
Reverse breakdown voltage |
| V | 10 | -- | -- | Ir ≤ 1nA |
Operating wavelength | λop | nm | 840 | 850 | 860 |
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Power Conversion Efficiency | PCE | % | 37 | 40 |
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Beam divergence FWHM | FWHM | deg | -- | 25 | -- | Whole angle |
ESD Survival |
| V | 1000 | -- | -- | (Notes 2, 3) |
額定參數
Parameter | Symbol | Rating | Notes |
Storage temperature |
| -40 to 100 °C |
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Operating temperature (VCSEL) | Tv | -20 to 90 °C |
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Lead solder temperature |
| 260°C, 10 seconds |
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Maximum Current (QCW) |
| 20A | Quasi-Continuous Wave Operation: Pulse Width < 1ms, <10% duty cycle |
Maximum pulsed current |
| 30A | <20μs pulse width, 0.04% duty cycle, T=25°C (Note 1)
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